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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 1/4 H01N45A N-Channel Power Field Effect Transistor H01N45A Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source 12 3 Features * Typical RDS(on)=4.1 * Extremely High dv/dt Capability * 100% Avalanche Tested * Gate Charge Minimized * New High Voltage Benchmark D G S Symbol: Applications * Switch Mode Low Power Supplies (SMPS) * Low Power, Low Cost CFL (Compact Fluorescent Lamps) * Low Power Battery Chargers Absolute Maximum Ratings Symbol VDS VDGR VGS ID ID IDM PD dv/dt Tj, Tstg IAR EAS Parameter Drain-Source Voltage (VGS=0) Drain-Gate Voltage (RGS=20K) Gate-Source Voltage Drain Current (Continuous) at TC=25 C Drain Current (Continuous) at TC=100 C Drain Current (Pulsed) Total Power Dissipation at TC=25 C Derate Factor Peak Diode recovery Voltage Slope Operating Junction and Storage Temperature Range Avalanche Current, Repetitive or Not-Repetitive (Pulse width limited by TJ Max.) Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25C (VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25) o o o Value 450 450 30 0.5 0.315 2 2.5 0.025 3 -65 to 150 1.5 25 Units V V V A A A W W/C V/ns C A mJ Thermal Data Symbol Rthj-amb Rthj-lead TL Parameter Thermal Resistance Junction-Ambient (Max.) Thermal Resistance Junction-Leadt (Max.) Maximum Lead Temperature for Soldering Purpose Value 120 40 260 Units o o C/W C/W o C H01N45A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Electrical Characteristics (Tcase=25C, unless otherwise specified) Symbol ON/OFF V(BR)DSS IDSS IGSS VGS(th) RDS(on) Dynamic gFS*1 Ciss Coss Crss Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHz VDSID(on)xRDS(on)max., ID=0.5A Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS=0) Gate-Body Leakage Current (VDS=0) Gate Threshold Voltage VGS=0V, ID=250uA VDS=Max. Rating VDS=Max. Rating, TC=125 C VGS=30V VDS=VGS, ID=250uA o Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 2/4 Characteristic Test Conditions Min. Typ. Max. Unit 450 2.3 - 3 4.1 1 50 100 3.7 4.5 V uA nA V Static Drain-Source On Resistance VGS=10V, ID=0.5A 1.1 185 27.5 6 230 10 S pF Switching On td(on) tr Qg Qgs Qgd Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS=360V, ID=0.5A, VGS=10V, RG=4.7) (VDD=225V, ID=0.5A, RG=4.7, VGS=10V) 6.7 4 14 2 3.2 20 nC ns Switching Off tr(Voff) tf tC Off-Voltage Rise Time Fall Time Cross-Over Time (VDD=360V, ID=1.5A, RG=4.7, VGS=10V) 8.5 12 18 ns Source Drain Diode ISD ISDM trr Qrr IRRM *2 Source-Drain Current Source-Drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=1.5A, VGS=0 ISD=1.5A, di/dt=100A/us VDD=100V, TJ=150oC - 225 530 4.7 1.5 6 1.6 - A V ns uC A VSD*1 *1: Pulse Test: Pulse duration=300us, duty cycle 1.5% *2: Pulse width limited by safe operating area. H01N45A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 3/4 2 Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None H A 01N4 5 Control Code 3 Date Code Note: Green label is used for pb-free packing C D Pin Style: 1.Gate 2.Drain 3.Source Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I 1 2 3 Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5 *2 *2 H I E F G *: Typical, Unit: mm 1 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm H2 H2 H2A H2A D2 A H3 H4 H L L1 H1 F1F2 T2 T T1 P1 P P2 D1 D W1 W Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H01N45A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200408 Issued Date : 2004.11.01 Revised Date : 2005.03.10 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o H01N45A HSMC Product Specification |
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